Features: · Advanced Process Technology· Ultra Low On-Resistance· Dynamic dv/dt Rating· 175°C Operating Temperature· Fast Switching· Fully Avalanche RatedSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V 46 A ID @ TC = 100 Continuous Drain Curr...
IRFP150V: Features: · Advanced Process Technology· Ultra Low On-Resistance· Dynamic dv/dt Rating· 175°C Operating Temperature· Fast Switching· Fully Avalanche RatedSpecifications Parameter Max. Units...
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Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 46 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 32 | A |
IDM | Pulsed Drain Current | 230 | A |
PD @ TC = 25 | Power Dissipation | 140 | W |
Linear Derating Factor | 0.91 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
IAR | Avalanche Current | 28 | A |
EAR | Repetitive Avalanche Energy | 20 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.8 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds |
300(1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
Advanced HEXFET® Power MOSFETs IRFP150V from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package IRFP150V is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 packcage because of its isolatedmounting hole.