IRFP150N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) @ Vds: 1900pF @ 25V
Packaging: Bulk
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 23A, 10V
Power - Max: 160W


Features:

• Ultra Low On-Resistance
- rDS(ON) = 0.030Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve




Specifications

	IRFP150N	UNITS
Drain to Source Voltage (Note 1) VDSS	100	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	100	V
Gate to Source Voltage VGS	±20	V
Pulsed Drain Current (Note 3) IDM	5	A
Gate to Source Voltage VGS	±20	V
Drain Current
Continuous (TC= 25oC, VGS = 10V) (Figure 2) ID	44	A
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID	31	A
Pulsed Avalanche Rating UIS	Figures 6, 14, 15
Operating and Storage Temperature .TJ, TSTG	-55 to 150	o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	o C
Package Body for 10s, See Techbrief 334 Tpkg	260	o C

Description

The IRFP150N is a 44A, 100V, 0.030 Ohm, N-channel power MOSFET.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).

Features of the IRFP150N are:(1)ultra low on-resistance,rds(on)= 0.030,Vgs=10V; (2)simulation models,temperature compensated PSPICE(TM) and SABER electrical models,spice and SABER thermal impedance models; (3)peak current vs pulse width curve; (4)UIS rating curve.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

The absolute maximum ratings of the IRFP150N can be summarized as:(1)drain to source voltage:100V;(2)storage temperature range:-55 to 175;(3)drain to gate voltage:100 V;(4)gate to source voltage:±20 V;(5)operating temperature:-55 to 175;(6)power dissipation:155W.Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license IRFP150N is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.