Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-3PN
Resistance Drain-Source RDS (on)
: 0.04 Ohms
Continuous Drain Current
: 43 A
DescriptionThe IRFP150A is a kind of advanced power MOSFET.
There are some features IRFP150A as follows: (1)avalanche rugged technology; (2)rugged gate oxide technology; (3)lower input capacitance; (4)improved gate charge; (5)extended safe operating area; (6)175 operating temperature; (7)lower leakage current: 10 A (max) @ VDS=100 V; (8)lower RDS(ON): 0.032 (typ.).
The following is about the absolute maximum ratings IRFP150A: (1)VDSS, drain-to-source voltage: 100 V; (2)ID, continuous drain current: 43 A at TC=25 and 30.4 A at TC=100; (3)IDM, drain current-pulsed: 170 A; (4)VGS, gate-to-source voltage: ±20 V; (5)EAS, single pulsed avalanche energy: 740 mJ; (6)IAR, avalanche current: 43 A; (7)EAR, repetitive avalanche energy: 19.3 mJ; (8)dv/dt, peak diode recovery dv/dt: 6.5 V/ns; (9)PD, total power dissipation (TC=25): 193 w; (10)TJ, operating junction temperature: -55 to +175; (11)TSTG, storage temperature range IRFP150A: -55 to +175; (12)TL, maximum lead temperature for soldering purposes, 1/8" from case for 5-second: 300.
Parameters: | Technical/Catalog Information | IRFP150A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 43A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 21.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2270pF @ 25V |
| Power - Max | 193W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 97nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFP150A
IRFP150A
|
IRFP150A Data Sheet
