IRFP140PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 31 A
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 0.077 Ohms


Description

The IRFP140PbF is designed as the third generation HEXFET from international recifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRFP140PbF has eight features. (1)Dynamic dv/dt rating. (2)Repetitive avalanche rated. (3)Isolated central mounting hole. (4)175°C operating temperature. (5)Fast switching. (6)Ease of paralleling. (7)Simple drive requirements. (8)Lead-free. That are all the main features.

Some absolute maximum ratings IRFP140PbF have been concluded into several points as follow. (1)Its continuous drain current Vgs at 10V would be 31A at 25°C and would be 22A at 100°C. (2)Its power dissipation would be 180W. (3)Its linear derating factor would be 1.2W/°C. (4)Its pulsed drain current would be 120A. (5)Its gate to source voltage would be +/-20V. (6)Its single pulse avalanche energy would be 100mJ. (7)Its avalanche current would be 31A. (8)Its repetitive avalanche energy would be 18mJ. (9)Its peak diode recovery dv/dt would be 5.5V/ns. (10)Its operating junctio and storage temperature range would be from -55°C to +175°C. (11)Its soldering temperature for 10 seconds would be 300°C (1.6mm from case). It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics IRFP140PbF are concluded as follow. (1)Its drain to source breakdown voltage would be min 100V. (2)Its breakdown voltage temperature coefficient would be typ 0.13V/°C. (3)Its gate threshold voltage would be min 2.0V and max 4.0V. (4)Its forward transconductance would be min 9.8S. (5)Its gate to source forward leakage would be max 100nA. (6)Its gate to source reverse leakage would be max -100nA. (7)Its total gate charge would be max 72nC. (8)Its gate to source charge would be max 11nC. (9)Its gate to drain charge would be max 32nC. (10)Its turn-on delay time would be typ 11ns. And so on. If you have any question or suggestion or want to know more information please contact us for IRFP140PbF details. Thank you!