IRFP140N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 33A
Input Capacitance (Ciss) @ Vds: 1400pF @ 25V
Packaging: Bulk
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Manufacturer: International Rectifier
Power - Max: 140W
Gate Charge (Qg) @ Vgs: 94nC @ 10V
Rds On (Max) @ Id, Vgs: 52 mOhm @ 16A, 10V


Features:

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V…	33	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V……	23
IDM	Pulsed Drain Current ………	110
PD @ TC = 25°C	Power Dissipation	140	W
	Linear Derating Factor	0.91	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy ……	300	mJ
IAR	Avalanche Current	16	A
EAR	Repetitive Avalanche Energy	14	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ	Operating Junction	-55 to + 175
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)	g