IRFP1405PBF

MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC

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IRFP1405PBF: MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC

floor Price/Ceiling Price

US $ .99~2.04 / Piece | Get Latest Price
Part Number:
IRFP1405PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.04
  • $1.39
  • $1.04
  • $.99
  • Processing time
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  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/6/2

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 160 A
Mounting Style : Through Hole Package / Case : TO-247AC
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-247AC
Continuous Drain Current : 160 A


Features:

 ·Advanced Process Technology
 ·Ultra Low On-Resistance
 ·175°C Operating Temperature
 ·Fast Switching
 ·Repetitive Avalanche Allowed up to Tjmax
 ·Lead-Free



Specifications

  Parameter Max. Units
ID @ TC=25 Continuous Drain Current, VGS @ 10V 160 A
ID @ TC=100 Continuous Drain Current, VGS @ 10V 110 A
ID @ TC=25 Continuous Drain Current, VGS @ 10V (Package Limited 95  
IDM Pulsed Drain Current 640 A
PD @ TC=25 Power Dissipation 310 W
  Linear Derating Factor 2.0 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 530 mJ
EAS Single Pulse Avalanche Energy Tested Value  1060  
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
Tj Operating Junction and -55 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds

300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFP1405PbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features IRFP1405PbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRFP1405PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C95A
Rds On (Max) @ Id, Vgs5.3 mOhm @ 95A, 10V
Input Capacitance (Ciss) @ Vds 5600pF @ 25V
Power - Max310W
PackagingBag
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFP1405PBF
IRFP1405PBF



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