FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 180nC @ 10V
Packaging: Bulk
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 5600pF @ 25V
Power - Max: 310W
Current - Continuous Drain (Id) @ 25° C: 95A
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 95A, 10V
Features: Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to TjmaxSpecifications
| Symbol |
Parameter |
Max. |
Units |
| ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
160 |
A |
| ID @ VGS = 12V, TC =100°C |
Continuous Drain Current |
110 |
A |
| IDM |
Pulsed Drain Current |
95 |
A |
| PD @ TV = 25 |
Power Dissipation |
640 |
W |
| |
Linear Derating Factor |
310 |
W/ |
| VGS |
Gate-to-Source Voltage |
2.0 |
V |
| EAS |
Single Pulse Avalanche Energy |
±20 |
mJ |
| IAR |
Avalanche Current |
530 |
A |
| EAR |
Repetitive Avalanche Energy |
1060 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
See Fig.12a, 12b, 15, 16 |
V/ns |
| TJ, TSTG |
Operating Junction
Storage Temperature Range |
-55 to 150 |
|
DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFP1405 utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design IRFP1405 an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRFP1405 Data Sheet
