IRFP064VPBF

MOSFET

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SeekIC No. : 00156798 Detail

IRFP064VPBF: MOSFET

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US $ .91~.91 / Piece | Get Latest Price
Part Number:
IRFP064VPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2730
  • Unit Price
  • $.91
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 130 A
Resistance Drain-Source RDS (on) : 5.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-247AC
Continuous Drain Current : 130 A
Resistance Drain-Source RDS (on) : 5.5 m Ohms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Optimized for SMPS Applications
· Lead-Free



Specifications

Symbol Parameter Max. Units
VDS Drain- Source Voltage 130 V
ID @ TA= 25 Continuous Drain Current, VGS @ -4.5V 95 A
ID @ TA= 100 Continuous Drain Current, VGS @ -4.5V 520 A
IDM Pulsed Drain Current 250 A
PD @ TA = 25 Power Dissipation ±20 W
PD @ TA = 70 Power Dissipation 130 W
  Linear Derating Factor 25 W/
EAS Single Pulse Avalanche Energy 4.7 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

Advanced HEXFET Power MOSFETs IRFP064VPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package IRFP064VPbF is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.




Parameters:

Technical/Catalog InformationIRFP064VPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C130A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 78A, 10V
Input Capacitance (Ciss) @ Vds 6760pF @ 25V
Power - Max250W
PackagingBag
Gate Charge (Qg) @ Vgs260nC @ 10V
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFP064VPBF
IRFP064VPBF



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