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IRFP054V

Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dynamic dv/dt Rating·175°C Operating Temperature·Fast Switching·Fully Avalanche Rated·Optimized for SMPS ApplicationsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130 A ...

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IRFP054V: Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dynamic dv/dt Rating·175°C Operating Temperature·Fast Switching·Fully Avalanche Rated·Optimized for SMPS ApplicationsSpecifications ...

IRFP054V Data Sheet

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Part Number:
IRFP054V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Optimized for SMPS Applications


Specifications

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
130
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
66
IDM Pulsed Drain Current
360
PD @TC = 25°C Power Dissipation
180
W
  Linear Derating Factor
1.2
W/°C
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
90
mJ
IAR Avalanche Current
18
A
EAR Repetitive Avalanche Energy
12
mJ
dv/dt Peak Diode Recovery dv/dt
4.7
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)



Description

Advanced HEXFET® Power MOSFETs IRFP054V from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package IRFP054V is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.




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