IRFNL210BTA_FP001, US $ .07-.07 , Fairchild Semiconductor, IRFNL210BTA_FP001 DataSheet download, circuit diagram from SeekIC.com

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IRFNL210BTA_FP001: MOSFET 200V N-CHAN

IRFNL210BTA_FP001 Data Sheet

US $ .07~.07 / Piece | Get Latest Price

Part Number:: IRFNL210BTA_FP001
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	1 A
Resistance Drain-Source RDS (on) :	1.5 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92L	Packaging :	Ammo

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Packaging : Ammo
Continuous Drain Current : 1 A
Package / Case : TO-92L

Parameters:

Technical/Catalog Information	IRFNL210BTA_FP001
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	1A
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	225pF @ 25V
Power - Max	3.1W
Packaging	Tape & Box (TB)
Gate Charge (Qg) @ Vgs	9.3nC @ 10V
Package / Case	TO-92L
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFNL210BTA_FP001 IRFNL210BTA_FP001

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IRFNL210BTA_FP001

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