Features: • 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V• Low gate charge ( typical 7.2 nC)• Low Crss ( typical 6.8 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFNL210B Units VDD D...
IRFNL210B: Features: • 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V• Low gate charge ( typical 7.2 nC)• Low Crss ( typical 6.8 pF)• Fast switching• 100% avalanche tested• Im...
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Symbol |
Parameter |
IRFNL210B |
Units |
VDD |
Drain-Source Voltage |
200 |
V |
ID |
Drain Current - Continuous (TC = 25°C)- Continuous (TC = 100°C) |
1.0 |
A |
0.93 |
A | ||
IDM |
Drain Current - Pulsed (Note 1) |
10 |
A |
VGSS |
Gate-Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy (Note2) |
40 |
mJ |
IAR |
Avalanche Current (Note 1) |
3.3 |
A |
EAR |
Repetitive Avalanche Energy (Note 1) |
0.031 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.0 |
V/ns |
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
3.1 |
W |
0.025 |
W/ | ||
TJ,TSTG. |
Operating and Storage Temperature Range |
-55 to +150 |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
These N-Channel enhancement mode power field effect transistors IRFNL210B are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices IRFNL210B are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.