IRFNL210B

Features: • 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V• Low gate charge ( typical 7.2 nC)• Low Crss ( typical 6.8 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFNL210B Units VDD D...

product image

IRFNL210B Picture
SeekIC No. : 004377229 Detail

IRFNL210B: Features: • 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V• Low gate charge ( typical 7.2 nC)• Low Crss ( typical 6.8 pF)• Fast switching• 100% avalanche tested• Im...

floor Price/Ceiling Price

Part Number:
IRFNL210B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/12

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 7.2 nC)
• Low Crss ( typical 6.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol
Parameter
IRFNL210B
Units
VDD
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)- Continuous (TC = 100°C)
1.0
A
0.93
A
IDM
Drain Current - Pulsed (Note 1)
10
A
VGSS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy (Note2)
40
mJ
IAR
Avalanche Current (Note 1)
3.3
A
EAR
Repetitive Avalanche Energy (Note 1)
0.031
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
5.0
V/ns
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
3.1
W
0.025
W/
TJ,TSTG.
Operating and Storage Temperature Range
-55 to +150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.5mH, IAS = 3.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 3.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C



Description

These N-Channel enhancement mode power field effect transistors IRFNL210B are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices IRFNL210B are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Industrial Controls, Meters
RF and RFID
Programmers, Development Systems
Integrated Circuits (ICs)
View more