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IRFN214BTA_FP001

MOSFET 250V N-CHAN

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SeekIC No. : 00161340 Detail

IRFN214BTA_FP001: MOSFET 250V N-CHAN

IRFN214BTA_FP001 Data Sheet

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Part Number:
IRFN214BTA_FP001
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.6 A
Resistance Drain-Source RDS (on) : 2000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92-3 Packaging : Ammo    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 0.6 A
Packaging : Ammo
Resistance Drain-Source RDS (on) : 2000 mOhms
Package / Case : TO-92-3


Parameters:

Technical/Catalog InformationIRFN214BTA_FP001
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C600mA
Rds On (Max) @ Id, Vgs2 Ohm @ 300mA, 10V
Input Capacitance (Ciss) @ Vds 275pF @ 25V
Power - Max1.8W
PackagingTape & Box (TB)
Gate Charge (Qg) @ Vgs10.5nC @ 10V
Package / CaseTO-92
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFN214BTA_FP001
IRFN214BTA_FP001



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