IRFL4310TR

MOSFET N-CH 100V 1.6A SOT223

product image

IRFL4310TR Picture
SeekIC No. : 003433621 Detail

IRFL4310TR: MOSFET N-CH 100V 1.6A SOT223

floor Price/Ceiling Price

Part Number:
IRFL4310TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 25nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 330pF @ 25V
Power - Max: 1W Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 1W
Current - Continuous Drain (Id) @ 25° C: 1.6A
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) @ Vds: 330pF @ 25V
Manufacturer: International Rectifier


Parameters:

Technical/Catalog InformationIRFL4310TR
VendorInternational Rectifier (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs200 mOhm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds 330pF @ 25V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFL4310TR
IRFL4310TR
IRFL4310CT ND
IRFL4310CTND
IRFL4310CT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Semiconductor Modules
Motors, Solenoids, Driver Boards/Modules
Batteries, Chargers, Holders
Test Equipment
Memory Cards, Modules
View more