IRFL1006TR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 8nC @ 10V
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 1.6A
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Series: HEXFET®
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V


Parameters:

Technical/Catalog Information	IRFL1006TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	1.6A
Rds On (Max) @ Id, Vgs	220 mOhm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds	160pF @ 25V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	8nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFL1006TR IRFL1006TR