Position: Home  > All Categories> Integrated Circuits (ICs) > IRFAG50

IRFAG50

Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of ParallelingSpecifications Parameter Units ID@VGS =0V,TC = 25°C Continuous Drain Current 5.6 A ID@VGS =0V,TC=100°C Continuous Drain Current 3.5 ...

product image

IRFAG50 Picture
See larger image
SeekIC No. : 004376946 Detail

IRFAG50: Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of ParallelingSpecifications Parameter Units ID@VGS =0V,TC = 25°C ...

IRFAG50 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFAG50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling 


Specifications

 Parameter
Units
ID@VGS =0V,TC = 25°C
 Continuous Drain Current
5.6
A
ID@VGS =0V,TC=100°C
 Continuous Drain Current
3.5
IDM
 Pulsed Drain Current
22
PD @ TC = 25°C
 Max. Power Dissipation
150
W
 Linear Derating Factor
1.2
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
860
mJ
IAR
 Avalanche Current
5.6
A
EAR
 Repetitive Avalanche Energy
15
mJ
dv/dt
 Peak Diode Recovery dv/dt
1.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
oC
 Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
 Weight
11.5(typical)
g



Description

    The HEXFET® technology IRFAG50 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very low on-state resis-tance combined with high transconductance; superior re-verse energy and diode recovery dv/dt capability.

    The HEXFET transistors IRFAG50 also feature all of the well estab-lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

    They are well suited for applications IRFAG50 such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Integrated Circuits (ICs)
TA8435H
1MB12-140
Cable Assemblies
CS1W-CN114
XW2Z-500T
Discrete Semiconductor Products
T508N12TOF
MUR20040
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Kits
IT243
UVSC-110-4E1
View more