Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of ParallelingSpecifications Parameter Units ID@VGS =0V,TC = 25°C Continuous Drain Current 3.6 A ID@VGS =0V,TC=100°C Continuous Drain Current 2.3 ...
IRFAC30: Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of ParallelingSpecifications Parameter Units ID@VGS =0V,TC = 25°C ...
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Parameter |
Units | ||
ID@VGS =0V,TC = 25°C |
Continuous Drain Current |
3.6 |
A |
ID@VGS =0V,TC=100°C |
Continuous Drain Current |
2.3 | |
IDM |
Pulsed Drain Current |
14 | |
PD @ TC = 25°C |
Max. Power Dissipation |
75 |
W |
Linear Derating Factor |
0.6 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
180 |
mJ |
IAR |
Avalanche Current |
3.6 |
A |
EAR |
Repetitive Avalanche Aergy |
7.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
3.0 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300 (0.063 in. (1.6mm) from case for 10s) | ||
Weight |
11.5(typical) |
g |
The HEXFET(C) technology IRFAC30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very low on-state resis-tance combined with high transconductance; superior re-verse energy and diode recovery dv/dt capability.
The HEXFET transistors IRFAC30 also feature all of the well estab-lished advantages of MOSFETs such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.