IRFAC30

Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of ParallelingSpecifications Parameter Units ID@VGS =0V,TC = 25°C Continuous Drain Current 3.6 A ID@VGS =0V,TC=100°C Continuous Drain Current 2.3 ...

product image

IRFAC30 Picture
SeekIC No. : 004376935 Detail

IRFAC30: Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of ParallelingSpecifications Parameter Units ID@VGS =0V,TC = 25°C ...

floor Price/Ceiling Price

Part Number:
IRFAC30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/29

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling



Specifications

Parameter
Units
ID@VGS =0V,TC = 25°C
Continuous Drain Current
3.6
A
ID@VGS =0V,TC=100°C
Continuous Drain Current
2.3
IDM
Pulsed Drain Current
14
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
180
mJ
IAR
Avalanche Current
3.6
A
EAR
Repetitive Avalanche Aergy
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
3.0
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5(typical)
g



Description

The HEXFET(C) technology IRFAC30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very low on-state resis-tance combined with high transconductance; superior re-verse energy and diode recovery dv/dt capability.

The HEXFET transistors IRFAC30 also feature all of the well estab-lished advantages of MOSFETs such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Inductors, Coils, Chokes
Industrial Controls, Meters
Power Supplies - External/Internal (Off-Board)
Memory Cards, Modules
Audio Products
View more