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IRFAE40

Features: · Repetitive Avalanche Ratings· Dynamic dv/dt Rating· Hermetically Sealed· Simple Drive Requirements· Ease of ParallelingSpecifications Parameter Max. Units EAS Single Pulse Avalanche Energy ➁ 550 mJ VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Cur...

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SeekIC No. : 004376939 Detail

IRFAE40: Features: · Repetitive Avalanche Ratings· Dynamic dv/dt Rating· Hermetically Sealed· Simple Drive Requirements· Ease of ParallelingSpecifications Parameter Max. Units EAS Single Pu...

IRFAE40 Data Sheet

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Part Number:
IRFAE40
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

· Repetitive Avalanche Ratings
· Dynamic dv/dt Rating
· Hermetically Sealed
· Simple Drive Requirements
· Ease of Paralleling


Specifications

  Parameter Max. Units
EAS Single Pulse Avalanche Energy ➁ 550 mJ
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current ➀ 4.8 A
EAR Repetitive Avalanche Energy ➀ 12.5 mJ
       
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 4.8 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.0 A
IDM Pulsed Drain Current 19 A
PD @TC = 25°C Power Power Dissipation 125 W
  Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt 2.0 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
  Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) °C
  Weight 11.5(typical) g



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