IRFAE30

Features:

Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling


Specifications

	Parameter		Units
ID@VGS =0V,TC = 25°C	Continuous Drain Current	3.1	A
ID@VGS =0V,TC=100°C	Continuous Drain Current	2.0
IDM	Pulsed Drain Current	12
PD @ TC = 25°C	Max. Power Dissipation	75	W
	Linear Derating Factor	0.6	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	100	mJ
IAR	Avalanche Current	3.1	A
EAR	Repetitive Avalanche Energy	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt	2.0	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150	oC
	Lead Temperature	300 (0.063 in. (1.6mm) from case for 10s)
	Weight	11.5(typical)	g

Description

   The HEXFET^(C) technology IRFAE30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very low on-state resis-tance combined with high transconductance; superior re-verse energy and diode recovery dv/dt capability.

   The HEXFET transistors IRFAE30 also feature all of the well estab-lished advantages of MOSFETs such as voltage control,very fast switching, ease of paralleling and temperature  stability of the electrical parameters.

   They are well suited for applications such as switching  power supplies, motor controls, inverters, choppers, audio  amplifiers and high energy pulse circuits.