Features: ` RoHS Compliant Containing No Lead and Bromide` Low Profile (<0.7 mm)` Dual Sided Cooling Compatible ` Ultra Low Package Inductance` Optimized for High Frequency Switching ` Ideal for CPU Core DC-DC Converters` Optimized for Control FET application` Low Conduction and Switching Losse...
IRF6722SPbF: Features: ` RoHS Compliant Containing No Lead and Bromide` Low Profile (<0.7 mm)` Dual Sided Cooling Compatible ` Ultra Low Package Inductance` Optimized for High Frequency Switching ` Ideal for ...
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Symbol | Parameter | Max. | Units |
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V | 13 | A |
ID @ TA=70°C | Continuous Drain Current, VGS @ 10V | 11 | A |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 58 | A |
IDM | Pulsed Drain Current | 110 | A |
EAS | Maximum Power Dissipation | 82 | mJ |
IAR | Maximum Power Dissipation |
11 |
A |
The IRF6722SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6722SPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6722SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6722SPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.