IRF610

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Continuous Drain Current : 2.3 A


Features:

• 3.3A, 200V
• rDS_(ON) = 1.500W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
    - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

		IRF610	UNITS
Drain to Source Voltage (Note 1)	VDS	200	V
Drain to Gate Voltage (RGS = 20k) (Note 1)	VDGR	200	V
Continuous Drain Current	ID	3.3	A
TC = 100	ID	2.1	A
Pulsed Drain Current (Note 2)	IDM	8	A
Gate to Source Voltage	VGS	±20	V
Maximum Power Dissipation	PD	43	W
Linear Derating Factor		0.34	W/
Single Pulse Avalanche Energy Rating (Note 4)	EAS	46	mJ
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s	TL	300
Package Body for 10s, See Techbrief 334	Tpkg	260

1. T_J = 25 to 125.



Description

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs IRF610 are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types of IRF610 can be operated directly from integrated circuits. Formerly developmental type TA17442.