IRF6100

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 5.1A
Input Capacitance (Ciss) @ Vds: 1230pF @ 15V
Packaging: Cut Tape (CT)
Power - Max: 2.2W
Gate Charge (Qg) @ Vgs: 21nC @ 5V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.1A, 4.5V
Package / Case: 4-FlipFet?
Supplier Device Package: 4-FlipFet?


Features:

Ultra Low R_DS(on) per Footprint Area
Low Thermal Resistance
P-Channel MOSFET
One-third Footprint of SOT-23
Super Low Profile (<.8mm)
Available Tested on Tape & Reel




Specifications

	Parameter	Max.	Units
VDS	Source-to-Source Voltage	-20	V
ID @ TA = 25°C	Continuous Current,VGS @ 4.5V	±5.1	A
ID @ TA = 70°C	Continuous Current, VGS @ 4.5V	±3.5
IDM	Pulsed Current	±35
PD @TA = 25°C	Power Dissipation	2.2	W
PD @TA = 70°C	Power Dissipation	1.4
	Linear Derating Factor	17	mW/°C
VGS	Gate-to-Source Voltage	±12	V
TJ TSTG	Junction and Storage Temperature Range	-55 to + 150	°C

Description

True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques,and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits of IRF6100, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device.

The FlipFET™ package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, IRF6100 makes the FlipFET™ the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.




Parameters:

Technical/Catalog Information	IRF6100
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.1A
Rds On (Max) @ Id, Vgs	65 mOhm @ 5.1A, 4.5V
Input Capacitance (Ciss) @ Vds	1230pF @ 15V
Power - Max	2.2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	21nC @ 5V
Package / Case	4-FlipFet?
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6100 IRF6100 IRF6100CT ND IRF6100CTND IRF6100CT