IRF6720S2TR1PBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 12.8 mOhms


Features:

` RoHS Compliant Containing No Lead and Bromide
` Low Profile (<0.7 mm)
` Dual Sided Cooling Compatible
` Ultra Low Package Inductance
` Optimized for High Frequency Switching
` Ideal for CPU Core DC-DC Converters
` Optimized for Control FET Application
` Compatible with existing Surface Mount Techniques
` 100% Rg tested


Specifications

	Parameter	Max.	Units
VDS VGS	Drain-to-Source Voltage Gate-to-Source Voltage	±20 30	V
ID @ TA = 25 ID @ TA = 70 ID @ TC = 25 IDM	Continuous Drain Current, VGS @ 10V 􀀀 Continuous Drain Current, VGS @ 10V 􀀀 Continuous Drain Current, VGS @ 10V Pulsed Drain Current	9.2 35 92 11	A
EAS IAR	Single Pulse Avalanche Energy Avalanche Current	12 8.8	mJ A

NOTES:

Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25, L = 0.31mH, R_G = 25, I_AS = 8.8A.

Description

The IRF6720S2TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6720S2TR1PbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6720S2PbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters.

Parameters:

Technical/Catalog Information	IRF6720S2TR1PBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	8 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1140pF @ 15V
Power - Max	1.7W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	12nC @ 4.5V
Package / Case	DirectFET? Isometric S1
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6720S2TR1PBF IRF6720S2TR1PBF IRF6720S2TR1PBFDKR ND IRF6720S2TR1PBFDKRND IRF6720S2TR1PBFDKR