IRF6716MTRPBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Packaging : Reel
Continuous Drain Current : 39 A
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 2.6 mOhms


Features:

· RoHs Compliant Containing No Lead and Bromide
· Low Profile (<0.6 mm)
· Dual Sided Cooling Compatible
· Ultra Low Package Inductance
· Optimized for High Frequency Switching
· Ideal for CPU Core DC-DC Converters
· Optimized for Sync. FET socket of Sync. Buck Converter
· Low Conduction and Switching Losses
· Compatible with existing Surface Mount Techniques
· 100% Rg tested


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	25	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	39	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	31
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	180
IDM	Pulsed Drain Current	320
EAS	Single Pulse Avalanche Energy	330	mJ
IAR	Avalanche Current	32	A

Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25, L = 0.65mH, R_G = 25, I_AS = 32A.


Description

The IRF6716MTRPbF combines the latest HEXFET^® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6716MTRPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MTRPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications

Parameters:

Technical/Catalog Information	IRF6716MTRPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	39A
Rds On (Max) @ Id, Vgs	1.6 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	5150pF @ 13V
Power - Max	3.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	59nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6716MTRPBF IRF6716MTRPBF