Configuration
:
Maximum Operating Temperature
:
Mounting Style
:
Package / Case
:
Transistor Polarity
: N-Channel
Drain-Source Breakdown Voltage
: 25 V
Packaging
: Reel
Gate-Source Breakdown Voltage
: 20 V
Resistance Drain-Source RDS (on)
: 2.7 mOhms
Continuous Drain Current
: 180 A
Features: · RoHs Compliant Containing No Lead and Bromide
· Low Profile (<0.6 mm)
· Dual Sided Cooling Compatible
· Ultra Low Package Inductance
· Optimized for High Frequency Switching
· Ideal for CPU Core DC-DC Converters
· Optimized for Sync. FET socket of Sync. Buck Converter
· Low Conduction and Switching Losses
· Compatible with existing Surface Mount Techniques
· 100% Rg testedSpecifications
| |
Parameter |
Max |
Unit |
| VDS |
Drain-to-Source Voltage |
25 |
V |
| VGS |
Gate-to-Source Voltage |
±20 |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ 10V |
34 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ 10V |
27 |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ 10V |
180 |
| IDM |
Pulsed Drain Current |
270 |
| EAS |
Single Pulse Avalanche Energy |
200 |
mJ |
| IAR |
Avalanche Current |
27 |
A |
DescriptionThe IRF6715MTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6715MTRPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6715MTRPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6715MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6715MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Parameters: | Technical/Catalog Information | IRF6715MTRPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 34A |
| Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 34A, 10V |
| Input Capacitance (Ciss) @ Vds | 5340pF @ 13V |
| Power - Max | 2.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 59nC @ 4.5V |
| Package / Case | DirectFET? Isometric MX |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF6715MTRPBF
IRF6715MTRPBF
|
IRF6715MTRPBF Data Sheet
