IRF6714MTRPBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Packaging : Reel
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 3.4 mOhms
Continuous Drain Current : 166 A


Features:

RoHs Compliant Containing No Lead and Bromide
Low Profile (<0.6 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested


Specifications

	Parameter	Max.	Unit
VDS	Drain- Source Voltage	25	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TC= 25	Continuous Drain Current, VGS @ 10V	29	A
ID @ TC= 70	Continuous Drain Current, VGS @ 10V	23	A
ID @ TC= 25	Continuous Drain Current, VGS @ 10V	166	A
IDM	Pulsed Drain Current	234	A
EAS	Junction and Storage Temperature Range	175	mJ
IAR	Single Pulse Avalanche Energy	23	A

Description

The IRF6714MTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package IRF6714MTRPbF allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6714MTRPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6714MTRPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MTRPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6714MTRPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	29A
Rds On (Max) @ Id, Vgs	2.1 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds	3890pF @ 13V
Power - Max	2.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	44nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6714MTRPBF IRF6714MTRPBF