IRF6713STRPBF

MOSFET

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IRF6713STRPBF Picture
SeekIC No. : 00155956 Detail

IRF6713STRPBF: MOSFET

floor Price/Ceiling Price

US $ .71~.71 / Piece | Get Latest Price
Part Number:
IRF6713STRPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~3430
  • 3430~4800
  • Unit Price
  • $.71
  • $.71
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 95 A
Resistance Drain-Source RDS (on) : 4.6 mOhms Packaging : Reel    

Description

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Packaging : Reel
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 4.6 mOhms
Continuous Drain Current : 95 A


Features:

` RoHS Compliant Containing No Lead and Bromide
` Low Profile (<0.7 mm)
` Dual Sided Cooling Compatible
` Ultra Low Package Inductance
` Optimized for High Frequency Switching
` Ideal for CPU Core DC-DC Converters
` Optimized for both Sync.FET and some Control FET application
` Low Conduction and Switching Losses
` Compatible with existing Surface Mount Techniques
` 100% Rg tested



Specifications

Parameter
Max.
Units
VDS
Drain-to-Source Voltage
25
V
VGS
Gate-to-Source Voltage
±20
ID @ TA = 25
Continuous Drain Current VGS@ 10V
22
A
ID @ TA = 70
Continuous Drain Current, VGS@10V
17
ID @ TC = 25
Continuous Drain Current VGS@ 10V
95
IDM
Pulsed Drain Current
170
EAS
Single Pulse Avalanche Energy
34
mJ
IAR
Avalanche Current
17
A





Description

The IRF6713STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6713STRPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6713STRPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.




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