IRF6668TRPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Packaging : Reel
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 80 V
Continuous Drain Current : 55 A


Features:

` RoHs Compliant
` Lead-Free (Qualified up to 260 Reflow)
` Application Specific MOSFETs
` Ideal for High Performance Isolated Converter Primary Switch Socket
` Optimized for Synchronous Rectification
` Low Conduction Losses
` High Cdv/dt Immunity
` Low Profile (<0.7mm)
` Dual Sided Cooling Compatible
` Compatible with existing Surface Mount Techniques


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	25	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	17	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	13
IDM	Pulsed Drain Current	130
EAS	Single Pulse Avalanche Energy	13	mJ
IAR	Avalanche Current	13	A

T_C measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25, L = 0.088mH, R_G = 25, I_AS = 23A.



Description

The IRF6668TRPbF combines the latest HEXFET^® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6668TRPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6668TRPbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI input voltage range systems. The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.

Parameters:

Technical/Catalog Information	IRF6668TRPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	15 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	1320pF @ 25V
Power - Max	2.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	DirectFET? Isometric MZ
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6668TRPBF IRF6668TRPBF IRF6668TRPBFTR ND IRF6668TRPBFTRND IRF6668TRPBFTR