IRF6665

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Drain
Continuous Drain Current : 4.2 A
Package / Case : Direct-FET SH
Resistance Drain-Source RDS (on) : 62 m Ohms


Features:

• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 100W per channel into 8 with no heatsink

• Dual sided cooling compatible
• Compatible with existing surface mount technologies
•Lead and Bromide Free




Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	100	V
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	19	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	4.2	A
ID @ TA = 100°C	Continuous Drain Current, VGS @ 10V	3.4	A
IDM	Pulsed Drain Current	34	A
PD @TC = 25°C	Maximum Power Dissipation	42	W
PD @TA = 25°C	Power Dissipation	2.2	W
PD @TA = 100°C	Power Dissipation	1.4	W
	Linear Derating Factor	0.017	mW/°C
VGS	Gate-to-Source Voltage	± 20	V
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 175	°C

Description

This IRF6665 is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.

The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The IRF6665 TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.