IRF6662

The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve thelowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible withexisting layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,when application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6662 package allows dual sidedcooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6662 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupledwith the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,and makes this device ideal for high performance isolated DC-DC converters.