Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Mounting Style
:
Package / Case
:
Transistor Polarity
: N-Channel
Packaging
: Reel
Drain-Source Breakdown Voltage
: 100 V
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 4.2 A
Features: RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for High Performance Isolated Converter Primary Switch Socket
Ideal for Control FET sockets in 36V-75V in Synchronous Buck applications
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Specifications
| Symbol |
Parameter |
Max. |
Units |
| VDS |
Drain-Source Voltage |
100 |
V
|
| VGS |
Gate-to-Source Voltage |
±20 |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
4.2 |
A |
| ID @ TC= 70 |
Continuous Drain Current, VGS @ 10V |
3.4 |
| PD @TC = 25 |
Continuous Drain Current, VGS @ 10V |
19 |
|
| IDM |
Pulsed Drain Current |
34 |
|
| EAS |
Single Pulse Avalanche Energy |
11 |
mJ |
| IAR |
Avalanche Current |
5.0 |
|
DescriptionThe IRF6655TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6655TRPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6655TRPbF is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Parameters: | Technical/Catalog Information | IRF6655TRPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 4.2A |
| Rds On (Max) @ Id, Vgs | 62 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 530pF @ 25V |
| Power - Max | 2.2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 11.7nC @ 10V |
| Package / Case | DirectFET? Isometric SH |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF6655TRPBF
IRF6655TRPBF
IRF6655TRPBFTR ND
IRF6655TRPBFTRND
IRF6655TRPBFTR
|
IRF6655TRPBF Data Sheet
