IRF6655

The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
The IRF6655 are low Profile (<0.7 mm), Dual Sided Cooling Compatible, Ultra Low Package Inductance, Optimized for High Frequency Switching, Ideal for High Performance Isolated Converter, Primary Switch Socket, Ideal for Control FET sockets in 36V 75V in Synchronous Buck applications, Low Conduction Losses.
The parameters of the IRF6655 are VDS(Drain-to-Source Voltage)=100V, VGS (Gate-to-Source Voltage)=±20V, ID @ TA = 25°C (Continuous Drain Current, VGS @ 10V(Surface mounted on 1 in. square Cu board, steady state.))=4.2A, ID @ TA = 70°C (Continuous Drain Current, VGS @ 10V )=3.4A, ID @ TC = 25°C (Continuous Drain Current, VGS @ 10V)=19A, IDM (Pulsed Drain Current)=34A, EAS (Single Pulse Avalanche Energy)=11mJ, IAR (Avalanche Current)=5.0A.