IRF6648

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 86 A
Configuration : Single Quad Drain Dual Source
Package / Case : Direct-FET MN
Resistance Drain-Source RDS (on) : 7 m Ohms


Features:

` RoHs Compliant Containing No Lead and Bromide
` Low Profile (<0.7 mm)
` Dual Sided Cooling Compatible
` Ultra Low Package Inductance
` Optimized for High Frequency Switching
` Optimized for Synchronous Rectification for 5V o 12V outputs
` Ideal for 24V input Primary Side Forward Converters
` Low Conduction Losses
` Compatible with Existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	60	V
VGS	Gate-to-Source Voltage	±20
ID @ Tc = 25	Continuous Drain Current, VGS @ 10V	86	A
ID @ Tc = 70	Continuous Drain Current, VGS @ 10V	69
IDM	Pulsed Drain Current	260
IS @ TC = 25	Continuous Source Current (Body Diode)	81
IS @ TC = 70	Continuous Source Current (Body Diode)	52
ISM	Pulsed Source Current (Body Diode)	260

Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
epetitive rating; pulse width limited by max. junction temperature.
T_C measured with thermocouple mounted to top (Drain) of part.




Description

The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET^TM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFETpackage is copatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods nd processes. The IRF6648 package allows dual sided cooling to maximize thermal transfer in power systems, improvingprevious best thermal resistance by 80%.

The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as aprimary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermalperformance enables high efficiency and low temperatures, which are key for system reliability provements, and makes thisdevice ideal for high performance isolated DC-DC converters.

Parameters:

Technical/Catalog Information	IRF6648
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	86A
Rds On (Max) @ Id, Vgs	7 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	2120pF @ 25V
Power - Max	2.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	DirectFET? Isometric MN
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6648 IRF6648