IRF6646

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 80 V
Configuration : Single Quad Drain Dual Source
Package / Case : Direct-FET MN
Resistance Drain-Source RDS (on) : 9.5 m Ohms


Features:

􀁺` RoHS compliant containing no lead or bromide
􀁺` Low Profile (<0.7 mm)
􀁺` Dual Sided Cooling Compatible
􀁺` Ultra Low Package Inductance
􀁺` Optimized for High Frequency Switching
􀁺` Ideal for High Performance Isolated Converter rimary Switch Socket
􀁺` Optimized for Synchronous Rectification
􀁺` Low Conduction Losses
􀁺` Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	80	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	12	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	9.6
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	68
IDM	Pulsed Drain Current	96
EAS	Single Pulse Avalanche Energy	230	mJ
IAR	Avalanche Current	7.2</

Description

The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve thelowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible withexisting layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sidedcooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6646 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupledwith the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,and makes this device ideal for high performance isolated DC-DC converters.

Parameters:

Technical/Catalog Information	IRF6646
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	2060pF @ 25V
Power - Max	2.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	DirectFET? Isometric MN
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6646 IRF6646