IRF6645

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 5.7 A
Package / Case : Direct-FET SJ
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 35 m Ohms


Features:

` RoHs Compliant Containing No Lead and Bromide
` Low Profile (<0.7 mm)
` Dual Sided Cooling Compatible
` Ultra Low Package Inductance
` Optimized for High Frequency Switching
` Ideal for High Performance Isolated Converter rimary Switch Socket
` Optimized for Synchronous Rectification
` Low Conduction Losses
` Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	100	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	5.7	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	4.5
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	25
IDM	Pulsed Drain Current	45
EAS	Single Pulse Avalanche Energy	29	mJ
IAR	Avalanche Current	3.4	A

Description

The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve thelowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible withexisting layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,when application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6645 package allows dual sidedcooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupledwith the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,and makes this device ideal for high performance isolated DC-DC converters.