Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Mounting Style
:
Package / Case
:
Transistor Polarity
: N-Channel
Packaging
: Reel
Drain-Source Breakdown Voltage
: 100 V
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 10.3 A
Features: ` RoHS Compliant
` Lead-Free (Qualified up to 260°C Reflow)
` Application Specific MOSFETs
` Ideal for High Performance Isolated Converter Primary Switch Socket
` Optimized for Synchronous Rectification
` Low Conduction Losses
` High Cdv/dt Immunity
` Low Profile (<0.7mm)
` Dual Sided Cooling Compatible `
` Compatible with existing Surface Mount Techniques Specifications
| Symbol |
Parameter |
Max. |
Units |
| VDS |
Drain-to-Source Voltage |
100 |
V |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V |
10.3 |
A |
| ID @ TA=70°C |
Continuous Drain Current, VGS @ 10V |
8.3 |
A |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
60 |
A |
| IDM |
Pulsed Drain Current |
82 |
A |
| EAS |
Maximum Power Dissipation |
220 |
mJ |
| IAR |
Maximum Power Dissipation |
6.2 |
A |
DescriptionThe IRF6644TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6644TRPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644TRPbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Parameters: | Technical/Catalog Information | IRF6644TRPBF |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 10.3A |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 10.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 2210pF @ 25V |
| Power - Max | 2.8W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 47nC @ 10V |
| Package / Case | DirectFET? Isometric MN |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF6644TRPBF
IRF6644TRPBF
IRF6644TRPBFDKR ND
IRF6644TRPBFDKRND
IRF6644TRPBFDKR
|
IRF6644TRPBF Data Sheet
