MOSFET MOSFT 100V 60A 13mOhm 35nC Qg
IRF6644TR1PBF: MOSFET MOSFT 100V 60A 13mOhm 35nC Qg
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 10.3 A | ||
Resistance Drain-Source RDS (on) : | 10.3 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Direct-FET MN | Packaging : | Reel |
Technical/Catalog Information | IRF6644TR1PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 10.3A |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 10.3A, 10V |
Input Capacitance (Ciss) @ Vds | 2210pF @ 25V |
Power - Max | 2.8W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 47nC @ 10V |
Package / Case | DirectFET? Isometric MN |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF6644TR1PBF IRF6644TR1PBF IRF6644TR1PBFTR ND IRF6644TR1PBFTRND IRF6644TR1PBFTR |