IRF6644

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Dual Source
Package / Case : Direct-FET MN
Resistance Drain-Source RDS (on) : 13 m Ohms
Continuous Drain Current : 10.3 A


Features:

· Lead and Bromide Free ·
· Low P·rofile (<0.7 mm)
· Dual Sided Cooling Compatible ·
· Ultra Low Package Inductance
· Optimized for High Frequency Switching ·
· Ideal for High Performance Isolated Converter Primary Switch Socket
· Optimized for Synchronous Rectification
· Low Conduction Losses
· Compatible with existing Surface Mount Techniques ·




Specifications

	Parameter	Max.	Units
ID @ TA = 25°C	Continuous Drain Current, VGS @ -10V	10.3	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ -10V	8.3	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	60	A
IDM	Pulsed Drain Current	60	A
EAS	Single Pulse Avalanche Energy	82	A
IAR	Avalanche Current	220	mJ
VDS	Drain- Source Voltage	100	V
VGS	Gate-to-Source Voltage	± 20	V

Description

The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6644 package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.