IRF6641TRPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 4.6 A


Features:

· RoHS Compliant
· Lead-Free (Qualified up to 260°C Reflow)
· Application Specific MOSFETs
· Ideal for High Performance Isolated Converter Primary Switch Socket
· Optimized for Synchronous Rectification
· Low Conduction Losses
· High Cdv/dt Immunity
· Dual Sided Cooling Compatible
· Compatible with existing Surface Mount Techniques


Specifications

	Parameter	Max.	Unit
VDS	Drain- Source Voltage	200	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TC= 25	Continuous Drain Current, VGS @ 10V	4.6	A
ID @ TC= 70	Continuous Drain Current, VGS @ 10V	3.7	A
ID @ TC= 25	Continuous Drain Current, VGS @ 10V	26	A
IDM	Pulsed Drain Current	37	A
EAS	Junction and Storage Temperature Range	46	mJ
IAR	Single Pulse Avalanche Energy	11	A

Description

The IRF6641TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6641TRPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6641TRPbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.

Parameters:

Technical/Catalog Information	IRF6641TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	4.6A
Rds On (Max) @ Id, Vgs	59.9 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	2290pF @ 25V
Power - Max	2.8W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	48nC @ 10V
Package / Case	DirectFET? Isometric MZ
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6641TRPBF IRF6641TRPBF IRF6641TRPBFDKR ND IRF6641TRPBFDKRND IRF6641TRPBFDKR