MOSFET MOSFT 200V 26A 60mOhm 34nC Qg
IRF6641TR1PBF: MOSFET MOSFT 200V 26A 60mOhm 34nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 4.6 A | ||
Resistance Drain-Source RDS (on) : | 51 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Direct-FET MZ | Packaging : | Reel |
Technical/Catalog Information | IRF6641TR1PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 4.6A |
Rds On (Max) @ Id, Vgs | 59.9 mOhm @ 5.5A, 10V |
Input Capacitance (Ciss) @ Vds | 2290pF @ 25V |
Power - Max | 2.8W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 48nC @ 10V |
Package / Case | DirectFET? Isometric MZ |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF6641TR1PBF IRF6641TR1PBF IRF6641TR1PBFTR ND IRF6641TR1PBFTRND IRF6641TR1PBFTR |