IRF6638TRPBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 3.9 mOhms
Continuous Drain Current : 25 A


Features:

` RoHs Compliant
` Lead-Free (Qualified up to 260 Reflow)
` Application Specific MOSFETs
` Ideal for CPU Core DC-DC Converters
` Low Conduction Losses
` High Cdv/dt Immunity
` Low Profile (<0.7mm)
` Dual Sided Cooling Compatible
` Compatible with existing Surface Mount Techniques


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V 􀀀	25	V
ID @ TA = 70	Continuous Drain Current, VGS @ 10V 􀀀	20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	140
IDM	Pulsed Drain Current	200
EAS	Single Pulse Avalanche Energy	37	mJ
IAR	Avalanche Current	20	A

Notes:
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25, L = 0.19mH, R_G = 25, I_AS = 20A.


Description

The IRF6638TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6638TRPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6638TRPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6638PbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6638PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6638TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	2.9 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	3770pF @ 15V
Power - Max	2.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	45nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6638TRPBF IRF6638TRPBF IRF6638TRPBFCT ND IRF6638TRPBFCTND IRF6638TRPBFCT