IRF6637

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 14 A
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 7.7 m Ohms
Package / Case : Direct-FET MP


Features:

` Lead and Bromide Free
` Low Profile (<0.7 mm)
` Dual Sided Cooling Compatible
` Ultra Low Package Inductance
` Optimized for High Frequency Switching
` Ideal for CPU Core DC-DC Converters
` Optimized for both Sync.FET and some Control FET application
` Low Conduction and Switching Losses
` Compatible with existing Surface Mount Techniques

Specifications

	Parameter	Max.	Unit
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	14	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V 􀀀	11
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	59
IDM	Pulsed Drain Current	110
EAS	Single Pulse Avalanche Energy	31
IAR	Avalanche Current	11	°C

Description

The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6637 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6637 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Parameters:

Technical/Catalog Information	IRF6637
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	7.7 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	1330pF @ 15V
Power - Max	2.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	DirectFET? Isometric MP
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6637 IRF6637