IRF6636

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 20 V
Configuration : Single Quad Drain Dual Source
Package / Case : Direct-FET ST
Resistance Drain-Source RDS (on) : 3.2 m Ohms


Features:

RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for for Control FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±20
ID@ TA= 25°C	Continuous Drain Current, VGS @ 10V	18	A
ID@ TA= 25°C	Continuous Drain Current, VGS @ 10V	15
ID@ TA= 25°C	Continuous Drain Current, VGS @ 10V	81
IDM	Pulsed Drain Current	140
EAS	Single Pulse Avalanche Energy	28	mJ
IAR	Avalanche Current	14	A

Description

The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allowsdual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6636 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operatingfrom 12 voltbuss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Parameters:

Technical/Catalog Information	IRF6636
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	4.5 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	2420pF @ 10V
Power - Max	2.2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	27nC @ 4.5V
Package / Case	DirectFET? Isometric ST
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6636 IRF6636 IRF6636CT ND IRF6636CTND IRF6636CT