IRF6635TRPBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 2.4 mOhms


Features:

`RoHs Compliant  
` Lead-Free (Qualified up to 260Reflow
`Application Specific MOSFETs
`Ideal for CPU Core DC-DC Converters
`Low Conduction Losses
`High Cdv/dt Immunity Low Profile (<0.7mm)
`Dual Sided Cooling Compatible 
`Compatible with existing Surface Mount Techniques


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	32	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	25
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	180
IDM	Pulsed Drain Current	250
EAS	Single Pulse Avalanche Energy	200	mJ
IAR	Avalanche Current	25	A

Description

The IRF6635TRPbF combines the latest HEXFET^® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The IRF6635TRPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6635TRPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter!'s SyncFET sockets

Parameters:

Technical/Catalog Information	IRF6635TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	1.8 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds	5970pF @ 15V
Power - Max	2.8W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	71nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6635TRPBF IRF6635TRPBF IRF6635TRPBFDKR ND IRF6635TRPBFDKRND IRF6635TRPBFDKR