FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.8W
Series: HEXFET®
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 32A
Manufacturer: International Rectifier
Package / Case: DirectFET? Isometric MX
Supplier Device Package: DIRECTFET? MX
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Gate Charge (Qg) @ Vgs: 71nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5970pF @ 15V
Parameters: | Technical/Catalog Information | IRF6635TR1 |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 32A |
| Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 32A, 10V |
| Input Capacitance (Ciss) @ Vds | 5970pF @ 15V |
| Power - Max | 2.8W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 71nC @ 4.5V |
| Package / Case | DirectFET? Isometric MX |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF6635TR1
IRF6635TR1
IRF6635TR1CT ND
IRF6635TR1CTND
IRF6635TR1CT
|
IRF6635TR1 Data Sheet
