IRF6635

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.8W
Packaging: Tape & Reel (TR)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 32A
Manufacturer: International Rectifier
Package / Case: DirectFET? Isometric MX
Supplier Device Package: DIRECTFET? MX
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Gate Charge (Qg) @ Vgs: 71nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5970pF @ 15V


Features:

􀁺` RoHs compliant containing no lead or bromide
􀁺` Low Profile (<0.7 mm)
􀁺` Dual Sided Cooling Compatible
􀁺` Ultra Low Package Inductance
􀁺` Optimized for High Frequency Switching
􀁺` Ideal for CPU Core DC-DC Converters
􀁺` Optimized for for SyncFET socket of Sync. Buck Converter
􀁺` Low Conduction and Switching Losses
􀁺` Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V �􀁥	32	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V 􀁥	25
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V 􀁦	180
IDM	Pulsed Drain Current 􀁥	250
EAS	Single Pulse Avalanche Energy 􀁦	200	mJ
IAR	Avalanche Current 􀁥	25	A

Description

The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging toachieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFETpackage is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methodsand processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improvingprevious best thermal resistance by 80%.

The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductanceto reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/highefficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635 has een optimized for parameters that are critical in synchronous buck converter's SyncFET sockets.