IRF6633

The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFE^TTM packaging to achieve thelowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allowsdual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switchinglosses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processorsoperating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 voltbuss converters including Rds(on) and gate charge to minimize losses in the control FET socket.