IRF6629TRPBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Packaging : Reel
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 2.7 mOhms


Features:

· RoHs Compliant ·
· Lead-Free (Qualified up to 260°C Reflow)
· Application Specific MOSFETs
· Ideal for CPU Core DC-DC Converters
· Low Conduction Losses
· High Cdv/dt Immunity
· Low Profile (<0.7mm)
· Dual Sided Cooling Compatible ·
· Compatible with existing Surface Mount Techniques ·


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 12	V
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	12	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	10
IDM	Pulsed Drain Current	100
PD @TA = 25°C	Maximum Power Dissipation	2.5	W
PD @TA = 70°C	Maximum Power Dissipation	1.6	W
	Linear Derating Factor	0.02	W/°C
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150	°C

Description

The IRF6629TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6629TRPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6629PbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6629PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6629TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	29A
Rds On (Max) @ Id, Vgs	2.1 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds	4260pF @ 13V
Power - Max	2.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	51nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6629TRPBF IRF6629TRPBF IRF6629TRPBFCT ND IRF6629TRPBFCTND IRF6629TRPBFCT