IRF6626

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 16 A
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 5.4 m Ohms
Package / Case : Direct-FET ST


Features:

· RoHS compliant containing no lead or bromide
· Low Profile (<0.7 mm)
· Dual Sided Cooling Compatible
· Ultra Low Package Inductance
· Optimized for High Frequency Switching
· Ideal for CPU Core DC-DC Converters
· Optimized for both Sync. FET and some Control FET applications
· Low Conduction and Switching Losses
· Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	16	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	13
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	72
IDM	Pulsed Drain Current	130
EAS	Single Pulse Avalanche Energy	24	mJ
IAR	Avalanche Current	13	A

Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25, L = 0.29mH, R_G = 25, I_AS = 13A.
Surface mounted on 1 in. square Cu board, steady state.
T_C measured with thermocouple mounted to top (Drain) of part.




Description

The IRF6626 combines the latest HEXFET^® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques of the IRF6626, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Parameters:

Technical/Catalog Information	IRF6626
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	5.4 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	2380pF @ 15V
Power - Max	2.2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	29nC @ 4.5V
Package / Case	DirectFET? Isometric ST
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6626 IRF6626 IRF6626CT ND IRF6626CTND IRF6626CT