IRF6623

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 16 A
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 5.7 m Ohms
Package / Case : DirectFET ST Isometric


Parameters:

Technical/Catalog Information	IRF6623
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1360pF @ 10V
Power - Max	1.4W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	DirectFET? Isometric ST
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6623 IRF6623 IRF6623CT ND IRF6623CTND IRF6623CT