IRF6622TRPBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Packaging : Reel
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 8.9 mohms


Features:

`RoHs Compliant
`Lead-Free (Qualified up to 260 Reflow )
`Application Specific MOSFETs
`Ideal for CPU Core DC-DC Converters
`Low Conduction Losses
`High Cdv/dt Immunity
`Low Profile (<0.7mm)
`Dual Sided Cooling Compatible 
`Compatible with existing Surface Mount Techniques 


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	25	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	15	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	12
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	59
IDM	Pulsed Drain Current	120
EAS	Single Pulse Avalanche Energy	13	mJ
IAR	Avalanche Current	12	A

Description

The IRF6622TRPbF combines the latest HEXFET^® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6622TRPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low  package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-ers that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that are critical in synchronous buck converter's ControlFET sockets

Parameters:

Technical/Catalog Information	IRF6622TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	6.3 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1450pF @ 13V
Power - Max	2.2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	DirectFET? Isometric SQ
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6622TRPBF IRF6622TRPBF IRF6622TRPBFDKR ND IRF6622TRPBFDKRND IRF6622TRPBFDKR